IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN transistor, and MOSFET.

The Collector and the Emitter are the conduction terminals and the gate is the control terminal with which the switching operation is controlled.

The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. The typical symbol of IGBT along with its image is shown below.Īs mentioned earlier an IGBT is a fusion between a BJT and MOSFET. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. IGBT is the short form of Insulated Gate Bipolar Transistor. In this article, we get familiar with the basics of IGBT, how they work, and how to use them in your circuit designs. You can think of IGBT as a fusion between BJT and MOSFET, these components have the input characteristics of a BJT and output characteristics of a MOSFET. So, we moved another popular power electronic switching device called the IGBT. But, both these components had some limitations to be used in very high current applications. We have already discussed in detail about the working of BJT and the working of MOSFET and how they are used in circuits. The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET.

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